Перегляд за автором "Vlasov, S.I."

Сортувати за: Порядок: Результатів:

  • Vlasov, S.I.; Saparov, F.A.; Ismailov, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects ...
  • Vlasov, S.I.; Ovsyannikov, A.V.; Ismailov, B.K.; Kuchkarov, B.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the ...